Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) gated with sputtered silicon dioxide dielectric were fabricated. Under different sputtering pressures of dioxide, the device is able to produce transfer curves from clockwise hysteresis anticlockwise hysteresis, corresponding operation modes and thus adding complementary performance by same material system structure. In interface trapping mode, transistor exhibited inhibitory synaptic spiking behavior induced positive stimuli. electric double-layer coupling stimuli led excitatory behavior, while negative resulted in behavior. All behaviors are conducted within ±1 V range. Enriched functionality ultralow voltage make SiO 2 -gated IGZO TFTs promising candidate for neuromorphic applications.